600 600 420 47 120 4.0 1.0 gbl401......gbl407 ?? ? 50---1000v 4.0 a siyu r v a i r ? i f =2 .0a ta= 25 ta = 25 electrical characteristics ratings at 25 ambient temperature unless otherwise specified. unit symbols maximum forward voltage maximum reverse current v f -55--- +150 v v v a a /w v rrm v rms v dc i f(av) i fsm ?? ta = 25 maximum ratings & thermal characteristics ratings at 25 ambient temperature unless otherwise specified. ??? maximum repetitive peak reverse voltage ? maximum rms voltage ??? maximum dc blocking voltage ? maximum average forward rectified current ?? 8.3ms??? peak forward surge current 8.3 ms single half sine-wave typical thermal resistance o?? symbols unit single-phase silicon bridge rectifier reverse voltage 50 to 1000 v forward current 4.0a operating junction and storage temperature range tj, tstg dachang electronics r ja tc =50 gbl 403 400 400 280 gbl 402 200 200 140 gbl 401 50 50 35 10 500 ta = 125 unit mm 20.0 0.5 1.4 0.2 1.0 0.1 5.0 0.2 2.5 0.2 3.5 0.2 5.0 0.2 5.0 0.2 11.0 0.3 gbl 1.0 0.2 0.5 0.2 13.5 0.7 features ? low reverse leakage ?? high forward surge capability mechanical data ? : ?? case: molded plastic : ???? polarity: symbols molded or marked on body ? : mounting position: any ?120 a s urge overload rating: 120 amperes peak ???rohs? lead and body according with rohs standard gbl 404 gbl 405 gbl 406 gbl 407 100 100 70 800 800 560 1000 1000 700 gbl 403 gbl 402 gbl 401 gbl 404 gbl 405 gbl 406 gbl 407
siyu r characteristic curves i f (a) ? i f(av) (a) i f instantaneous forward current (a) ?? i fsm (a) 10 100 02 5 20 50 0 100 120 80 60 30 20 i fsm 8.3ms 8.3ms 1 cycle non-repetitive tj=25 before vf instantaneous forward voltage (v) peak forward surge current number of cycles at 60 hz. ? ? v f (v) ??? ?? forward current derating curve typical forward characteristic maximum non repetitive i fsm peak forward surge current (a) i f(a) average forward rectified current (a) dachang electronics gbl401......gbl407 0 40 80 120 160 0 2.0 4.0 1.0 3.0 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1 10 pulse measurement per diode tl=25 ? ta( c ) tamb, ambient temperature (c)
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